具有时间相关特性的埋门MESFET的光学效应

Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010) Pub Date : 2010-11-01 DOI:10.1109/RSTSCC.2010.5712824

T. Jaya, V. Kannan

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摘要

通过求解连续性方程，分析了具有前照度的埋门GaAs MESFET的时变特性。本分析包括离子注入埋栅过程。当t = 0时，通过光纤的光处于“ON”状态，我们考虑了“OFF”状态。对通道电荷和通道电流进行了评价和讨论。埋门光场效应晶体管(OPFET)将非常适合于光通信和光计算领域。

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Optical effect on the buried gate MESFET with time dependent characteristics

Time - dependent characteristic of buried-gate GaAs MESFET with front illumination have been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time ‘t’ is equal to zero, the light through the optical fiber is turning ‘ON’ and ‘OFF’ has been considered. The channel charge and channel current have been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for optical communication and optical computing.

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Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)

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