Dmitry Veksler, G. Bersuker, L. Vandelli, A. Padovani, L. Larcher, A. Muraviev, Bhaswar Chakrabarti, Eric M. Vogel, David Gilmer, Paul Kirsch
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Random telegraph noise (RTN) in scaled RRAM devices
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution. P-p decreases with the reduction of the read current, which allows scaling of the RRAM operating current. The RTN effect is attributed to the mechanism of activation/deactivation of the electron traps in (in HRS) or near (in LRS) the filament that affects the current through the RRAM device.
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