光通信用高速封装电吸收调制器

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI:10.1109/ECTC.2000.853198

A. Bond, G. Shtengel, P. Singh, Y. Akulova, C. Reynolds

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引用次数: 3

摘要

采用集成模式转换器的InGaAsP材料体系制备了高速封装电吸收调制器。封装的器件具有43 GHz调制带宽，-10 dB电回波损耗和2Vp-p的10 dB消光。介绍了高速器件的器件设计和封装考虑。

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High speed packaged electroabsorption modulators for optical communications

High speed packaged electroabsorption modulators are fabricated from the InGaAsP material system with integrated mode converters. The packaged devices exhibit 43 GHz modulation bandwidth, -10 dB electrical return loss, and 10 dB extinction for 2Vp-p. Device design and package considerations for high speed devices is presented.

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来源期刊

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)

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