平面CMOS技术中的模拟SiPM

F. Villa, D. Bronzi, M. Vergani, Yu Zou, A. Ruggeri, F. Zappa, A. D. Mora
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引用次数: 8

摘要

硅光电倍增管(sipv)是新兴的单光子探测器,用于许多需要大的有效面积、光子数分辨能力和抗磁场的应用。我们开发了一种可靠且具有成本效益的CMOS技术的平面模拟sipm,其总光敏面积约为1×1 mm2。对三种具有不同活性面积和填充因子(21%,58.3%,73.7%)的器件进行了表征。最大的光子探测效率是在近紫外和38%的顶部(包括填充因子),黑暗计数率为125 kcps。增益和串扰取决于有源面积大小,可与商业上同类最佳定制技术的sipm相媲美。然而,我们的全CMOS处理使先进的SiPM单芯片系统,其中晶体管和进一步的片上电子器件可以与探测器集成在一起。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analog SiPM in planar CMOS technology
Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon number resolving capability and immunity to magnetic fields. We developed planar analog SiPMs in a reliable and cost-effective CMOS technology with a total photosensitive area of about 1×1 mm2. Three devices with different active areas, and fill-factor (21%, 58.3%, 73.7%), have been characterized. The maximum photon detection efficiency is in the near-UV and tops at 38% (fill-factor included), with a dark count rate of 125 kcps. Gain and crosstalk depend on the active area size and are comparable to those of commercial best-in-class custom-technology SiPMs. However our full CMOS processing enables advanced SiPM single-chip systems where transistors and further on chip electronics can be integrated together with the detectors.
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