大宽高比微膜片(电容传感器)的残余应变效应

R.S. Hijab, R. Muller
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引用次数: 13

摘要

作者描述了在电容读出传感器中使用的微膜片中产生低应变材料和减少残余应变影响的技术。由单双多晶硅层和单晶硅制成的方形多晶硅格栅和穿孔隔膜,其宽高比(边/厚度)高达1000,压缩应变非常低(约6*10/sup -5/)。应变减小是通过结合热退火和两种机械设计技术之一来实现的。第一种技术是利用一系列悬臂梁来支撑横隔板。在第二道工序中,在单晶硅薄膜中形成波纹状表面。波纹是硼掺杂和各向异性硅蚀刻的结果。在这两种生产低应变膜片的技术中,在其下方的衬底晶体中有意形成蚀刻腔。仅使用晶圆的单侧加工,从而有助于再现性,并提供易于与金属氧化物半导体工艺的兼容性。采用快速蚀刻牺牲支撑层(掺磷化学气相沉积氧化物)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Residual strain effects on large aspect ratio micro-diaphragms (capacitance transducer)
The authors describe techniques that result in low-strain materials and that reduce the effects of residual strain in microdiaphragms, which are used in capacitive-readout sensors. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain (about 6*10/sup -5/), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces, in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is used, thus aiding reproducibility and providing ease of compatibility with a metal-oxide-semiconductor process. A fast etching sacrificial-support layer (phosphorus-doped chemical-vapor-deposited oxide) is used.<>
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