{"title":"大宽高比微膜片(电容传感器)的残余应变效应","authors":"R.S. Hijab, R. Muller","doi":"10.1109/MEMSYS.1989.77977","DOIUrl":null,"url":null,"abstract":"The authors describe techniques that result in low-strain materials and that reduce the effects of residual strain in microdiaphragms, which are used in capacitive-readout sensors. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain (about 6*10/sup -5/), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces, in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is used, thus aiding reproducibility and providing ease of compatibility with a metal-oxide-semiconductor process. A fast etching sacrificial-support layer (phosphorus-doped chemical-vapor-deposited oxide) is used.<<ETX>>","PeriodicalId":369505,"journal":{"name":"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Residual strain effects on large aspect ratio micro-diaphragms (capacitance transducer)\",\"authors\":\"R.S. Hijab, R. Muller\",\"doi\":\"10.1109/MEMSYS.1989.77977\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe techniques that result in low-strain materials and that reduce the effects of residual strain in microdiaphragms, which are used in capacitive-readout sensors. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain (about 6*10/sup -5/), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces, in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is used, thus aiding reproducibility and providing ease of compatibility with a metal-oxide-semiconductor process. A fast etching sacrificial-support layer (phosphorus-doped chemical-vapor-deposited oxide) is used.<<ETX>>\",\"PeriodicalId\":369505,\"journal\":{\"name\":\"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1989.77977\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1989.77977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Residual strain effects on large aspect ratio micro-diaphragms (capacitance transducer)
The authors describe techniques that result in low-strain materials and that reduce the effects of residual strain in microdiaphragms, which are used in capacitive-readout sensors. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain (about 6*10/sup -5/), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces, in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is used, thus aiding reproducibility and providing ease of compatibility with a metal-oxide-semiconductor process. A fast etching sacrificial-support layer (phosphorus-doped chemical-vapor-deposited oxide) is used.<>