基于表面电位的MgZnO/ZnO高电子迁移率晶体管分析

2018 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) Pub Date : 2018-02-01 DOI:10.1109/SCEECS.2018.8546962

Y. Verma, S. Gupta, Varun Mishra, Prateek Kishor Verma

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引用次数: 0

摘要

本文对高电子迁移率晶体管进行了分析。设计并模拟了高电子迁移率晶体管的结构，研究了其特性。采用仿真技术计算了器件参数，并验证了该器件满足所有可靠性标准，可以成功地用于商业电路应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Surface Potential based analysis of MgZnO/ZnO High Electron Mobility Transistors

In this brief, the analysis of high electron mobility transistor is performed. Structure of high electron mobility transistor is designed and simulated to study its characteristics. The device parameters are calculated using simulation technique and it has been verified that the device satisfies all reliability criteria and can be used successfully for commercial circuit applications.

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来源期刊

2018 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS)

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