可调谐微波器件:现状与展望

E. Marsan, J. Gauthier, M. Chaker, K. Wu
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引用次数: 26

摘要

简要概述了半导体、微机电系统(MEMS)和铁氧体等最先进的频率敏捷技术,并与新兴的铁电技术(如Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST))进行了比较,这些铁电技术正在成为设计低成本和小型化可调谐集成微波器件(如滤波器和移相器)的有吸引力的候选技术。总结了铁电材料的特点,指出了在射频单片电路设计中使用BST薄膜的困难。在溶胶-凝胶工艺的基础上,BST薄膜已成功地沉积在氧化铝衬底上,以制造金属-绝缘体-金属(MIM)可调谐电容器。这种电容器在室温下的早期结果表明,在1-6 GHz范围内,在20偏置电压(34 V//spl mu/m)下,即使欧姆损耗仍然很高,也可以获得高达3.5的可调谐比(C/sub max//C/sub min/)。本研究还显示了7%的弱滞后效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tunable microwave device: status and perspective
State-of-the-art frequency-agile technologies such as semiconductors, micro-electro-mechanical systems (MEMS) and ferrites are briefly overviewed and compared with the emerging ferroelectric techniques such as Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) that are becoming an attractive candidate for designing low-cost and miniaturized tunable integrated microwave devices such as filters and phase shifters. Particularities of ferroelectric materials are summarized and difficulties in connection with the use of BST thin-films in RF monolithic circuit design are addressed. On the basis of a commercially available sol-gel process, BST thin-films have successfully been deposited on alumina substrate to fabricate metal-insulator-metal (MIM) tunable capacitors. Early results of such capacitors at the room temperature indicate that a tunable ratio (C/sub max//C/sub min/) as high as 3.5 can be obtained over 1-6 GHz with 20 biasing voltage (34 V//spl mu/m) even though the ohmic loss remains high. This research also shows a 7% weak effect of hysteresis.
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