将宽CMOS晶体管分解成最小尺寸栅极的好处

Hans Kristian Otnes Berge, S. Aunet
{"title":"将宽CMOS晶体管分解成最小尺寸栅极的好处","authors":"Hans Kristian Otnes Berge, S. Aunet","doi":"10.1109/NORCHP.2009.5397795","DOIUrl":null,"url":null,"abstract":"In this paper we show how decomposition of a wide CMOS transistor into a multi-finger FET with gates of minimum size can be beneficial for the reduction of delay and power-delay products in logic gates. This design possibility, which we call a minimum-split transistor (MST), seems to be largely overlooked in the literature. In a 90 nm CMOS process we compare the design to wide transistors. By exploiting the narrow-width effect, reduced parasitic capacitances from a shorter active channel and increased gate-drain spacing, we achieve up to 75–85% higher operation speed at a similar or reduced power consumption. The worst-case timing delay is reduced by 35–40% along with the nominal values. The design technique is considered valuable, in particular for critical time paths. The paper takes the perspective of subthreshold logic design at 200 mV, but the technique is also useful above threshold. A statistical experiment also investigates how Vth variation in MSTs changes with the number of parallell gates.","PeriodicalId":308859,"journal":{"name":"2009 NORCHIP","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Benefits of decomposing wide CMOS transistors into minimum-size gates\",\"authors\":\"Hans Kristian Otnes Berge, S. Aunet\",\"doi\":\"10.1109/NORCHP.2009.5397795\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we show how decomposition of a wide CMOS transistor into a multi-finger FET with gates of minimum size can be beneficial for the reduction of delay and power-delay products in logic gates. This design possibility, which we call a minimum-split transistor (MST), seems to be largely overlooked in the literature. In a 90 nm CMOS process we compare the design to wide transistors. By exploiting the narrow-width effect, reduced parasitic capacitances from a shorter active channel and increased gate-drain spacing, we achieve up to 75–85% higher operation speed at a similar or reduced power consumption. The worst-case timing delay is reduced by 35–40% along with the nominal values. The design technique is considered valuable, in particular for critical time paths. The paper takes the perspective of subthreshold logic design at 200 mV, but the technique is also useful above threshold. A statistical experiment also investigates how Vth variation in MSTs changes with the number of parallell gates.\",\"PeriodicalId\":308859,\"journal\":{\"name\":\"2009 NORCHIP\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 NORCHIP\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NORCHP.2009.5397795\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 NORCHIP","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2009.5397795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

摘要

在本文中,我们展示了如何将宽CMOS晶体管分解成具有最小尺寸栅极的多指场效应管,这有利于减少逻辑门中的延迟和功率延迟产物。这种设计的可能性,我们称之为最小分裂晶体管(MST),似乎在很大程度上被忽视的文献。在90纳米CMOS工艺中,我们将设计与宽晶体管进行比较。通过利用窄宽度效应,减少来自较短有源通道的寄生电容和增加栅极-漏极间距,我们在相似或更低的功耗下实现了高达75-85%的高运行速度。随着标称值的增加,最坏情况下的定时延迟减少了35-40%。设计技术被认为是有价值的,特别是对于关键的时间路径。本文从200mv下阈值逻辑设计的角度出发,但该技术也适用于阈值以上。统计实验还研究了MSTs的Vth随平行栅极数的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Benefits of decomposing wide CMOS transistors into minimum-size gates
In this paper we show how decomposition of a wide CMOS transistor into a multi-finger FET with gates of minimum size can be beneficial for the reduction of delay and power-delay products in logic gates. This design possibility, which we call a minimum-split transistor (MST), seems to be largely overlooked in the literature. In a 90 nm CMOS process we compare the design to wide transistors. By exploiting the narrow-width effect, reduced parasitic capacitances from a shorter active channel and increased gate-drain spacing, we achieve up to 75–85% higher operation speed at a similar or reduced power consumption. The worst-case timing delay is reduced by 35–40% along with the nominal values. The design technique is considered valuable, in particular for critical time paths. The paper takes the perspective of subthreshold logic design at 200 mV, but the technique is also useful above threshold. A statistical experiment also investigates how Vth variation in MSTs changes with the number of parallell gates.
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