利用碳纳米管发射体制备富钨阳极

MHS2003. Proceedings of 2003 International Symposium on Micromechatronics and Human Science (IEEE Cat. No.03TH8717) Pub Date : 2003-12-08 DOI:10.1109/MHS.2003.1249933

F. Arai, Pou Liu, Lixin Dong, M. Nakajima, T. Fukuda

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引用次数: 0

摘要

以六羰基钨(W(CO)/sub - 6/)和二甲基金((CH/sub - 3/)/sub - 2/(C/sub - 5/H/sub - 7/O/sub - 2/)Au)两种有机金属化合物为前驱体，采用电子束诱导沉积(EBID)法制备了导电纳米结构。测量了它们的电阻率和生长速率，并分析了矿床的成分。为了提高沉积层的分辨率并降低能耗，研究了以多壁碳纳米管(MWNTs)作为发射体的EBID。分析了影响MWNT发射器场发射特性的因素。在W(CO)/sub - 6/阳极镀层中，钨的质量达到80%左右。

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Tungsten-rich deposits at anode using carbon nanotube emitters

Electron-beam-induced deposition (EBID) with two kinds of organometallic compounds including tungsten hexacarbonyl (W(CO)/sub 6/) and dimethyl-gold ((CH/sub 3/)/sub 2/(C/sub 5/H/sub 7/O/sub 2/)Au) as precursors is presented so as to obtain conductive nanostructures. Their resistivity and growth rate are measured, and the compositions of deposits are analyzed. To improve the resolution of the deposit and to reduce energy consumption, EBID with multiwalled carbon nanotubes (MWNTs) as emitters is demonstrated. Factors influencing field emission characteristics of MWNT emitters are analyzed. In the deposit at anode by using W(CO)/sub 6/, mass of the tungsten reaches up to about 80% among the compositions.

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MHS2003. Proceedings of 2003 International Symposium on Micromechatronics and Human Science (IEEE Cat. No.03TH8717)

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