{"title":"一个1.8 V SiGe BiCMOS电缆均衡器与40db峰值控制高达60ghz","authors":"I. Sarkas, S. Voinigescu","doi":"10.1109/CSICS.2012.6340053","DOIUrl":null,"url":null,"abstract":"A low-noise, digitally-assisted broadband cable equalizer with 26 dB gain and over 40 dB of gain and peaking control from DC to 60 GHz was designed and fabricated in a production 130-nm SiGe BiCMOS technology. The circuit features a low-voltage and low-noise TIA input stage, and digitally variable gain cells based on MOS-HBT cascodes. Equalization of 44 and 78.6-Gb/s data rates over 6 and 4 m long coaxial cables with 30 dB attenuation at the respective Nyquist frequency is demonstrated. The chip consumes 250 mW from a single 1.8 V supply.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 1.8 V SiGe BiCMOS Cable Equalizer with 40-dB Peaking Control up to 60 GHz\",\"authors\":\"I. Sarkas, S. Voinigescu\",\"doi\":\"10.1109/CSICS.2012.6340053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-noise, digitally-assisted broadband cable equalizer with 26 dB gain and over 40 dB of gain and peaking control from DC to 60 GHz was designed and fabricated in a production 130-nm SiGe BiCMOS technology. The circuit features a low-voltage and low-noise TIA input stage, and digitally variable gain cells based on MOS-HBT cascodes. Equalization of 44 and 78.6-Gb/s data rates over 6 and 4 m long coaxial cables with 30 dB attenuation at the respective Nyquist frequency is demonstrated. The chip consumes 250 mW from a single 1.8 V supply.\",\"PeriodicalId\":290079,\"journal\":{\"name\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2012.6340053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.8 V SiGe BiCMOS Cable Equalizer with 40-dB Peaking Control up to 60 GHz
A low-noise, digitally-assisted broadband cable equalizer with 26 dB gain and over 40 dB of gain and peaking control from DC to 60 GHz was designed and fabricated in a production 130-nm SiGe BiCMOS technology. The circuit features a low-voltage and low-noise TIA input stage, and digitally variable gain cells based on MOS-HBT cascodes. Equalization of 44 and 78.6-Gb/s data rates over 6 and 4 m long coaxial cables with 30 dB attenuation at the respective Nyquist frequency is demonstrated. The chip consumes 250 mW from a single 1.8 V supply.
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