MOS器件的新型栅极概念

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356484

J. Colinge

{"title":"MOS器件的新型栅极概念","authors":"J. Colinge","doi":"10.1109/ESSDER.2004.1356484","DOIUrl":null,"url":null,"abstract":"The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and \"triple-plus\"-gate devices such as the pi-gate and omega-gate MOSFETs.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":"{\"title\":\"Novel gate concepts for MOS devices\",\"authors\":\"J. Colinge\",\"doi\":\"10.1109/ESSDER.2004.1356484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and \\\"triple-plus\\\"-gate devices such as the pi-gate and omega-gate MOSFETs.\",\"PeriodicalId\":287103,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"volume\":\"274 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"46\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDER.2004.1356484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 46

摘要

经典的MOSFET具有位于器件顶部的单栅电极。近年来，多栅极器件已采用SOI衬底制成。多栅极结构提供了潜在的更高电流驱动和减少短通道效应的好处。本文比较了双栅极结构(如FinFET)、三栅极结构和“三+”栅极器件(如pi栅极和ω栅极mosfet)的优点。

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Novel gate concepts for MOS devices

The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and "triple-plus"-gate devices such as the pi-gate and omega-gate MOSFETs.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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