Hiroshi Matsumoto, H. Yamashita, T. Tamura, K. Ohtoshi
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Multi-beam mask writer MBM-1000 will be released in Q4 2017 for N5 semiconductor production. The motivation to go to multi-beam is high throughput at aggressive shot count. MBM-1000 performs better than EBM-9500, which is our latest VSB writer, at shot count of 500 G/pass or more because of exposure count and beam current independent to figure count. Key technology for high throughput is cathode and high-voltage power supply which provides large beam emission current, inline data path and blanking aperture array (BAA) with 300 Gbps data ratio. In this paper, design of data path and BAA for MBM-1000 are described.
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