{"title":"碳纳米管场效应管高频性能评估","authors":"D. Pulfrey","doi":"10.1109/DRC.2006.305169","DOIUrl":null,"url":null,"abstract":"The small size, unusual topography, and technological immaturity of carbon nanotube field-effect transistors (CNFETs) have contributed, no doubt, to the fact that the present record for their measured \"frequencyindependent performance\" is a modest 23 GHz [1]. For the moment, then, we need to rely on simulations to get a better idea of the high-frequency capability of CNFETs. Any field-effect transistor exhibiting good high-frequency performance is likely to have a high, intrinsic, short-circuit, unity-current-gain, frequency","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"353 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Assessment of Carbon Nanotube FETs for High-Frequency Performance\",\"authors\":\"D. Pulfrey\",\"doi\":\"10.1109/DRC.2006.305169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The small size, unusual topography, and technological immaturity of carbon nanotube field-effect transistors (CNFETs) have contributed, no doubt, to the fact that the present record for their measured \\\"frequencyindependent performance\\\" is a modest 23 GHz [1]. For the moment, then, we need to rely on simulations to get a better idea of the high-frequency capability of CNFETs. Any field-effect transistor exhibiting good high-frequency performance is likely to have a high, intrinsic, short-circuit, unity-current-gain, frequency\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"353 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Assessment of Carbon Nanotube FETs for High-Frequency Performance
The small size, unusual topography, and technological immaturity of carbon nanotube field-effect transistors (CNFETs) have contributed, no doubt, to the fact that the present record for their measured "frequencyindependent performance" is a modest 23 GHz [1]. For the moment, then, we need to rely on simulations to get a better idea of the high-frequency capability of CNFETs. Any field-effect transistor exhibiting good high-frequency performance is likely to have a high, intrinsic, short-circuit, unity-current-gain, frequency
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