深亚微米时代精度、公差与补偿的关系

D. Hill, A. Domic
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引用次数: 0

摘要

从历史上看,ASIC解决方案往往是有效的,因为大多数生产技术的物理和规模允许电路设计人员(和电路设计工具)安全地抽象物理特性:芯片的尺寸和性能在很大程度上可以仅根据逻辑结构来预测。但时间很快就过去了,随着深亚微米(DSM)技术中500k +栅极芯片的出现,必须找到新的方法。本文从技术趋势的一些背景开始,然后回顾传统的“翻墙”方法。然后,第3节提出了基于估算、平面规划以及综合和门级放置技术的有效合作的“有限循环”设计流程。从估计过程中的误差以及后续步骤容忍和补偿误差的能力的角度来讨论这个流程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the relationship among accuracy, tolerance and compensation in the deep sub-micron era
Historically, ASIC solutions tended to be effective because the physics and scale of most production technologies allowed circuit designers (and circuit design tools) to safely abstract physical properties: the size and performance of chips could largely be predicted based on logical structure alone. But those days are going fast, and with the advent of 500 K+ gate chips in deep sub-micron (DSM) technologies, new approaches must be found, This paper starts with some background in technology trends, and then reviews the traditional "over the wall" methodology. Section 3 then proposes a "limited loops" design flow based on estimation, floorplanning, and the effective cooperation of synthesis and gate-level placement technologies. This flow is discussed from the perspective of error in the estimation processes and the ability of subsequent steps to tolerate and compensate for the error.
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