P. Shrestha, K. Cheung, J. Campbell, J. Ryan, H. Baumgart
{"title":"用于高级器件表征的快速电容","authors":"P. Shrestha, K. Cheung, J. Campbell, J. Ryan, H. Baumgart","doi":"10.1109/IIRW.2013.6804147","DOIUrl":null,"url":null,"abstract":"Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as trustworthy. We show a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results distinguish fast-CV as a powerful tool for device characterization and reliability measurements.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"139 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fast-capacitance for advanced device characterization\",\"authors\":\"P. Shrestha, K. Cheung, J. Campbell, J. Ryan, H. Baumgart\",\"doi\":\"10.1109/IIRW.2013.6804147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as trustworthy. We show a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results distinguish fast-CV as a powerful tool for device characterization and reliability measurements.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"139 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fast-capacitance for advanced device characterization
Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as trustworthy. We show a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results distinguish fast-CV as a powerful tool for device characterization and reliability measurements.
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