一个双掩模互补的LDMOS模块集成在0.25 /spl mu/m SiGe:C BiCMOS平台上

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356503

K. Ehwald, A. Fischer, F. Fuernhammer, W. Winkler, B. Senapati, R. Barth, D. Bolze, B. Heinemann, D. Knoll, H. Ruecker, D. Schmidt, I. Shevchenko, R. Sorge, H. Wulf

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引用次数: 16

摘要

将RF n-和p-LDMOS晶体管集成到CMOS或BiCMOS平台中，允许使用互补电路技术，并为线性RF功率放大器，功率开关，DC/DC转换器和高压IO电路提供有效的解决方案。我们展示了高性能n-LDMOS器件和创纪录的p-LDMOS晶体管的模块化集成到低成本的0.25 /spl mu/m SiGe:C RF-BiCMOS技术中。除了p基板上的n-LDMOS晶体管击穿电压接近30 V外，在同一晶圆上可以制造隔离的n-LDMOS和p-LDMOS晶体管，击穿电压分别为11.5 V和13.5 V, f/sub T//f/sub max/值分别为23/48 GHz或13/30 GHz。

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A two mask complementary LDMOS module integrated in a 0.25 /spl mu/m SiGe:C BiCMOS platform

The integration of RF n-and p-LDMOS transistors into a CMOS or BiCMOS platform allows the use of complementary circuit techniques and enables efficient solutions for linear RF power amplifiers, power switches, DC/DC converters and high voltage IO circuits. We demonstrate the modular integration of high performance n-LDMOS devices and a record p-LDMOS transistor into a low-cost 0.25 /spl mu/m SiGe:C RF-BiCMOS technology. In addition to n-LDMOS transistors on a p-substrate with breakdown voltages near 30 V, isolated n-LDMOS- and p-LDMOS transistors can be manufactured on the same wafer and achieve breakdown voltages of 11.5 V and 13.5 V and f/sub T//f/sub max/ values of 23/48 GHz or 13/30 GHz, respectively.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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