用IBIC显微镜分析大功率器件内的电场分布

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487994

M. Zmeck, L. Balk, R. Heiderhoff, T. Osipowicz, F. Watt, J. Phang, A. Khambadkone, F. Niedernostheide, H. Schulze

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引用次数: 10

摘要

本文介绍了时间分辨离子束感应电荷显微镜(IBIC)作为表征反向偏置高功率器件内电场分布的工具。讨论了不同参数的实测IBIC瞬态的二维映射，并与模拟IBIC数据进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of E-field distributions within high-power devices using IBIC microscopy

In this paper time resolved ion beam induced charge (IBIC) microscopy is introduced as a tool for the characterization of electrical field distributions within reverse biased high-power devices. Two dimensional maps of different parameters of the measured IBIC transients are discussed and compared with simulated IBIC data.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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