{"title":"MLP和DNN体系结构中Mos2Synaptic晶体管的系统级性能","authors":"Aaseesh Rallapalli, Shubhadeep Bhattacharjee","doi":"10.1109/EDTM55494.2023.10103053","DOIUrl":null,"url":null,"abstract":"Synaptic devices promise drastically lower power consumption in artificial neural networks vis-à-vis CMOS memories. In this work, we have demonstrated $\\text{MoS}_{2}$ synaptic transistors in n-FET, p-FET, and inverter configurations. Accounting for device non-idealities, we have simulated the system-level performance for MLP and VGG-8 DNN architectures. DNNs are robust to non-idealities with $\\sim$ 15% higher accuracy but at the cost of increased complexity as compared to MLPs. This work explores the complexity-accuracy trade-offs in ANNs for offsetting non-ideal device behavior.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"System-level Performance of Mos2Synaptic Transistors in MLP and DNN Architectures\",\"authors\":\"Aaseesh Rallapalli, Shubhadeep Bhattacharjee\",\"doi\":\"10.1109/EDTM55494.2023.10103053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Synaptic devices promise drastically lower power consumption in artificial neural networks vis-à-vis CMOS memories. In this work, we have demonstrated $\\\\text{MoS}_{2}$ synaptic transistors in n-FET, p-FET, and inverter configurations. Accounting for device non-idealities, we have simulated the system-level performance for MLP and VGG-8 DNN architectures. DNNs are robust to non-idealities with $\\\\sim$ 15% higher accuracy but at the cost of increased complexity as compared to MLPs. This work explores the complexity-accuracy trade-offs in ANNs for offsetting non-ideal device behavior.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
System-level Performance of Mos2Synaptic Transistors in MLP and DNN Architectures
Synaptic devices promise drastically lower power consumption in artificial neural networks vis-à-vis CMOS memories. In this work, we have demonstrated $\text{MoS}_{2}$ synaptic transistors in n-FET, p-FET, and inverter configurations. Accounting for device non-idealities, we have simulated the system-level performance for MLP and VGG-8 DNN architectures. DNNs are robust to non-idealities with $\sim$ 15% higher accuracy but at the cost of increased complexity as compared to MLPs. This work explores the complexity-accuracy trade-offs in ANNs for offsetting non-ideal device behavior.