{"title":"δ - σ调制输出温度传感器为1V电压供应","authors":"J. Ramírez, Joao P. Tiol, Diego Deotti, F. Fruett","doi":"10.1109/LASCAS.2019.8667536","DOIUrl":null,"url":null,"abstract":"This work presents a temperature sensor with a digital Delta-Sigma modulated output designed to work at a supply voltage as low as 1V to operate in a temperature range from −20°C to +125°C. A bandgap current reference circuit generates a current proportional to the temperature (PTAT) and a reference current. Both currents are integrated in a capacitor within a Delta-Sigma modulator, resulting in a digital output whose average value is proportional to the temperature. The sensor was designed using the 180nm TSMC technology and occupies an area of 285µm×190µm. Simulations showed a maximum nonlin-earity of 0.31% and a duty cycle variation of 0.531% per Cel-sius. The sensor power consumption is 120µW.","PeriodicalId":142430,"journal":{"name":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Delta-Sigma modulated output temperature sensor for 1V voltage supply\",\"authors\":\"J. Ramírez, Joao P. Tiol, Diego Deotti, F. Fruett\",\"doi\":\"10.1109/LASCAS.2019.8667536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a temperature sensor with a digital Delta-Sigma modulated output designed to work at a supply voltage as low as 1V to operate in a temperature range from −20°C to +125°C. A bandgap current reference circuit generates a current proportional to the temperature (PTAT) and a reference current. Both currents are integrated in a capacitor within a Delta-Sigma modulator, resulting in a digital output whose average value is proportional to the temperature. The sensor was designed using the 180nm TSMC technology and occupies an area of 285µm×190µm. Simulations showed a maximum nonlin-earity of 0.31% and a duty cycle variation of 0.531% per Cel-sius. The sensor power consumption is 120µW.\",\"PeriodicalId\":142430,\"journal\":{\"name\":\"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LASCAS.2019.8667536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2019.8667536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Delta-Sigma modulated output temperature sensor for 1V voltage supply
This work presents a temperature sensor with a digital Delta-Sigma modulated output designed to work at a supply voltage as low as 1V to operate in a temperature range from −20°C to +125°C. A bandgap current reference circuit generates a current proportional to the temperature (PTAT) and a reference current. Both currents are integrated in a capacitor within a Delta-Sigma modulator, resulting in a digital output whose average value is proportional to the temperature. The sensor was designed using the 180nm TSMC technology and occupies an area of 285µm×190µm. Simulations showed a maximum nonlin-earity of 0.31% and a duty cycle variation of 0.531% per Cel-sius. The sensor power consumption is 120µW.
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