{"title":"4瓦，45%带宽Si-LDMOS高线性功率放大器，用于现代无线通信系统","authors":"M. T. Arnous, G. Boeck","doi":"10.1109/ICTEA.2012.6462846","DOIUrl":null,"url":null,"abstract":"In this contribution, a Si-LDMOS transistor is used to design a power amplifier (PA) in a broad frequency band covering a number of modern wireless communications systems. The design, implementation, and experimental results of 4 W wideband Si-LDMOS PA are presented. A method based on source/load--pull characterization has been used to extract optimum source and load impedances over the desired bandwidth. Following this, a systematic approach to design wideband matching network is suggested. In the frequency band 1.7-2.7 GHz, 3.4 - 4.0 W output power and 25 % drain efficiency were achieved. The 3rd-order intermodulation distortion (IMD3) performance of the designed PA is evaluated by providing a two-tone signal to the amplifier. At two-tone output power of 1 W, IMD3 of around -30 dBc was measured over the design band.","PeriodicalId":245530,"journal":{"name":"2012 2nd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA)","volume":"388 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"4 Watt, 45% bandwidth Si-LDMOS high linearity power amplifier for modern wireless communications systems\",\"authors\":\"M. T. Arnous, G. Boeck\",\"doi\":\"10.1109/ICTEA.2012.6462846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution, a Si-LDMOS transistor is used to design a power amplifier (PA) in a broad frequency band covering a number of modern wireless communications systems. The design, implementation, and experimental results of 4 W wideband Si-LDMOS PA are presented. A method based on source/load--pull characterization has been used to extract optimum source and load impedances over the desired bandwidth. Following this, a systematic approach to design wideband matching network is suggested. In the frequency band 1.7-2.7 GHz, 3.4 - 4.0 W output power and 25 % drain efficiency were achieved. The 3rd-order intermodulation distortion (IMD3) performance of the designed PA is evaluated by providing a two-tone signal to the amplifier. At two-tone output power of 1 W, IMD3 of around -30 dBc was measured over the design band.\",\"PeriodicalId\":245530,\"journal\":{\"name\":\"2012 2nd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA)\",\"volume\":\"388 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 2nd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTEA.2012.6462846\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 2nd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTEA.2012.6462846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4 Watt, 45% bandwidth Si-LDMOS high linearity power amplifier for modern wireless communications systems
In this contribution, a Si-LDMOS transistor is used to design a power amplifier (PA) in a broad frequency band covering a number of modern wireless communications systems. The design, implementation, and experimental results of 4 W wideband Si-LDMOS PA are presented. A method based on source/load--pull characterization has been used to extract optimum source and load impedances over the desired bandwidth. Following this, a systematic approach to design wideband matching network is suggested. In the frequency band 1.7-2.7 GHz, 3.4 - 4.0 W output power and 25 % drain efficiency were achieved. The 3rd-order intermodulation distortion (IMD3) performance of the designed PA is evaluated by providing a two-tone signal to the amplifier. At two-tone output power of 1 W, IMD3 of around -30 dBc was measured over the design band.
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