光栅耦合表面发射体中的燃烧二阶光栅

A. Larsson, M. Hagberg, T. Kjellberg, N. Eriksson
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摘要

表面光栅是集成光学和光电子电路的有用组件,因为它们可以执行各种各样的功能[11]。二阶光栅(SOGs)可用于将导光模式衍射成辐射模式。由于光栅周期与波导中的波长相同,因此同时激发了反传播模式,因此光栅也提供了光反馈(谐振条件)。随着光栅周期的轻微失谐,反射波的激发被抑制,避免了光反馈(非谐振条件)。采用SOGs进行表面法向发射的水平腔半导体激光器引起了极大的兴趣,因为它们提供了通过改变光栅几何形状来控制光束的前景。对称SOGs的表面发射效率(SEE)受到辐射到衬底的大部分光功率的限制[2]。已经提出和/或演示了几种改善SEE的方法,例如波导下方的多层反射器来重新定向基片辐射[3]和各种类型的燃烧光栅[2,4-61]。根据光栅相对于入射波的方向,可以使燃烧SOGs优先辐射到空气或基板中。本文首次展示了光栅耦合表面发射(GSE)半导体激光器在谐振和非谐振条件下的燃烧效应。GSE激光器由InGaAdAlGaAs SQW-GRINSCH外延制成
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Blazed Second Order Gratings In Grating Coupled Surface Emitters
Surface gratings are useful components for integrated optic and optoelectronic circuits due to the large variety of functions they can perform [ 11. Second order gratings (SOGs) can be used to diffract a guided optical mode into a radiation mode. With the grating period identical to the wavelength in the waveguide, a counterpropagating mode is excited simultaneously and therefore the grating also provides optical feedback (resonant condition). With a slight detuning of the grating period, excitation of the reflected wave is suppressed and optical feedback is avoided (nonresonant condition). Horizontal cavity semiconductor lasers employing SOGs for surface normal emission are of great interest since they offer the prospect of beam control by varying the geometry of the grating. The surface emission efficiency (SEE) of symmetric SOGs is limited by the large fraction of the optical power that is radiated into the substrate [2]. Several methods to improve the SEE have been proposed and/or demonstrated, such as a multilayer reflector below the waveguide to redirect the substrate radiation [3] and various types of blazed gratings [2,4-61. Blazed SOGs can be made to radiate preferentially into air or substrate depending on the orientation of the grating with respect to the incident wave. Here we demonstrate, for the first time, blazing effects in grating coupled surface emitting (GSE) semiconductor lasers under both resonant and nonresonant conditions. The GSE lasers were fabricated from an InGaAdAlGaAs SQW-GRINSCH epitaxial
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