{"title":"用于驱动片上650V GaN电源开关的多米诺自举12V GaN驱动器，效率高达96%","authors":"Hsuan-Yu Chen, Wei-Tin Lin, Cheng-Hsiang Liao, Zong-Yi Lin, Zhi-Qiang Zhang, Yu-Yung Kao, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai","doi":"10.1109/VLSICircuits18222.2020.9162979","DOIUrl":null,"url":null,"abstract":"The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns.","PeriodicalId":252787,"journal":{"name":"2020 IEEE Symposium on VLSI Circuits","volume":"213 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency\",\"authors\":\"Hsuan-Yu Chen, Wei-Tin Lin, Cheng-Hsiang Liao, Zong-Yi Lin, Zhi-Qiang Zhang, Yu-Yung Kao, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai\",\"doi\":\"10.1109/VLSICircuits18222.2020.9162979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns.\",\"PeriodicalId\":252787,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Circuits\",\"volume\":\"213 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSICircuits18222.2020.9162979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSICircuits18222.2020.9162979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency
The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns.
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