{"title":"TiN/HfO/sub - 2/ SiO/sub - 2/栅极堆叠mosfet中电子和空穴迁移率的研究","authors":"F. Lime, G. Ghibaudo, B. Guillaumot","doi":"10.1109/ESSDERC.2003.1256860","DOIUrl":null,"url":null,"abstract":"In this work, the effective mobility of HfO/sub 2/ nMOSFETs and pMOSFETs has been investigated using low temperature measurements and constant voltage stress. It was found that the Coulomb scattering mechanism has significant influence on mobility degradation. A correlation between trapped charge and mobility degradation has been made, that could explain the difference observed in nMOS and pMOS mobility behavior compared to SiO/sub 2/.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigation of electron and hole mobilities in MOSFETs with TiN/HfO/sub 2//SiO/sub 2/ gate stack\",\"authors\":\"F. Lime, G. Ghibaudo, B. Guillaumot\",\"doi\":\"10.1109/ESSDERC.2003.1256860\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the effective mobility of HfO/sub 2/ nMOSFETs and pMOSFETs has been investigated using low temperature measurements and constant voltage stress. It was found that the Coulomb scattering mechanism has significant influence on mobility degradation. A correlation between trapped charge and mobility degradation has been made, that could explain the difference observed in nMOS and pMOS mobility behavior compared to SiO/sub 2/.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256860\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256860","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of electron and hole mobilities in MOSFETs with TiN/HfO/sub 2//SiO/sub 2/ gate stack
In this work, the effective mobility of HfO/sub 2/ nMOSFETs and pMOSFETs has been investigated using low temperature measurements and constant voltage stress. It was found that the Coulomb scattering mechanism has significant influence on mobility degradation. A correlation between trapped charge and mobility degradation has been made, that could explain the difference observed in nMOS and pMOS mobility behavior compared to SiO/sub 2/.
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