{"title":"基于0.18μm技术的新型半数字低功耗低抖动快速锁相环","authors":"F. Noruzpur, S. Mahdavi, M. Poreh, S. Ghasemi","doi":"10.23919/MIXDES.2018.8443590","DOIUrl":null,"url":null,"abstract":"This paper presents a new semi-digital low power, low jitter and fast Phase-Locked Loop (PLL). The main advantages of the proposed PLL are to achieve high-speed, to generate non-overlap signal and to consume low power, reliably. The total power consumption of the proposed PLL in frequencies of 150MHz and 400MHz are $\\pmb{258. 7\\mu\\mathrm{W}}$ and $\\pmb{638.4\\mu\\mathrm{W}}$, respectively. Meanwhile, in the maximum frequency (400MHz) the pick to pick and RMS jitter of the suggested structure are 29.95ps and 8.67ps, correspondingly. Also, at the 400MHz and 150MHz the locking time is $\\pmb{1.75\\mu{\\mathrm{s}}}$ and $\\pmb{0.814\\mu \\mathrm{s}}$, respectively. The active area of the PFD and proposed charge pump are $\\pmb{9.16\\times 5.65\\mu\\mathrm{m}^{2}}$ and $\\pmb{12.15\\times 6.45\\mu \\mathrm{m}^{2}}$ ' respectively. Simulation results of the proposed structure are simulated using the HSPICE BSIM3 model of a standard $\\pmb{0.18\\mu\\mathrm{m}}$ CMOS process.","PeriodicalId":349007,"journal":{"name":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","volume":"363 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A New Semi-Digital Low Power Low Jitter and Fast PLL in 0.18μm Technology\",\"authors\":\"F. Noruzpur, S. Mahdavi, M. Poreh, S. Ghasemi\",\"doi\":\"10.23919/MIXDES.2018.8443590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new semi-digital low power, low jitter and fast Phase-Locked Loop (PLL). The main advantages of the proposed PLL are to achieve high-speed, to generate non-overlap signal and to consume low power, reliably. The total power consumption of the proposed PLL in frequencies of 150MHz and 400MHz are $\\\\pmb{258. 7\\\\mu\\\\mathrm{W}}$ and $\\\\pmb{638.4\\\\mu\\\\mathrm{W}}$, respectively. Meanwhile, in the maximum frequency (400MHz) the pick to pick and RMS jitter of the suggested structure are 29.95ps and 8.67ps, correspondingly. Also, at the 400MHz and 150MHz the locking time is $\\\\pmb{1.75\\\\mu{\\\\mathrm{s}}}$ and $\\\\pmb{0.814\\\\mu \\\\mathrm{s}}$, respectively. The active area of the PFD and proposed charge pump are $\\\\pmb{9.16\\\\times 5.65\\\\mu\\\\mathrm{m}^{2}}$ and $\\\\pmb{12.15\\\\times 6.45\\\\mu \\\\mathrm{m}^{2}}$ ' respectively. Simulation results of the proposed structure are simulated using the HSPICE BSIM3 model of a standard $\\\\pmb{0.18\\\\mu\\\\mathrm{m}}$ CMOS process.\",\"PeriodicalId\":349007,\"journal\":{\"name\":\"2018 25th International Conference \\\"Mixed Design of Integrated Circuits and System\\\" (MIXDES)\",\"volume\":\"363 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 25th International Conference \\\"Mixed Design of Integrated Circuits and System\\\" (MIXDES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIXDES.2018.8443590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2018.8443590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A New Semi-Digital Low Power Low Jitter and Fast PLL in 0.18μm Technology
This paper presents a new semi-digital low power, low jitter and fast Phase-Locked Loop (PLL). The main advantages of the proposed PLL are to achieve high-speed, to generate non-overlap signal and to consume low power, reliably. The total power consumption of the proposed PLL in frequencies of 150MHz and 400MHz are $\pmb{258. 7\mu\mathrm{W}}$ and $\pmb{638.4\mu\mathrm{W}}$, respectively. Meanwhile, in the maximum frequency (400MHz) the pick to pick and RMS jitter of the suggested structure are 29.95ps and 8.67ps, correspondingly. Also, at the 400MHz and 150MHz the locking time is $\pmb{1.75\mu{\mathrm{s}}}$ and $\pmb{0.814\mu \mathrm{s}}$, respectively. The active area of the PFD and proposed charge pump are $\pmb{9.16\times 5.65\mu\mathrm{m}^{2}}$ and $\pmb{12.15\times 6.45\mu \mathrm{m}^{2}}$ ' respectively. Simulation results of the proposed structure are simulated using the HSPICE BSIM3 model of a standard $\pmb{0.18\mu\mathrm{m}}$ CMOS process.