利用卢瑟福后向散射光谱法分析Cu(Ti)/介电层样品中自形成富钛界面层的生长

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090372

K. Kohama, Kazuhiro Ito, K. Mori, K. Maekawa, Y. Shirai, M. Murakami

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摘要

为了系统地研究退火Cu(Ti)/介电层中富Ti界面层的生长，采用了RBS技术。在RBS中观察到的生长行为与TEM相似。因此，RBS技术是富钛界面层生长分析的一种合适的方法。

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Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry

For systematic investigation of growth of the Ti-rich interface layers in the annealed Cu(Ti)/dielectric-layer, the RBS technique was employed. Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be an appropriate method for the growth analysis of the Ti-rich interface layers.

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2009 IEEE International Interconnect Technology Conference

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