InPN薄膜在InP(001)衬底上的MOVPE生长

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516039

Yukihiro Seki, Yanzhe Wang, Q. Thieu, S. Kuboya, S. Sanorpim, K. Onabe

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引用次数: 0

摘要

采用金属有机气相外延法(MOVPE)生长了稀氮合金InPN薄膜，并通过改变主要生长参数研究了氮的掺入行为。生长表面形貌表明，在460-500°C和相对高的P供应条件下，可以获得具有原子平面的二维生长。XRD分析表明，随着生长温度的降低和N/P比的提高，氮的掺入量增加，氮浓度达到0.18%。在无晶格弛豫的情况下，在InP(001)上相干生长了150 ~ 170 nm厚的InPN薄膜。

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MOVPE growth of InPN films on InP(001) substrates

Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460–500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150–170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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