{"title":"碳纳米管柱阵列边缘效应对场发射特性的影响研究","authors":"C. Juan, Jun-Han Lin","doi":"10.1109/ISNE.2010.5669164","DOIUrl":null,"url":null,"abstract":"Effect of carbon nanotube pillar arrays' edge effect on field emission characteristics is first studied. The ratio of field emission current density at 5.733V/µm is about 55∶ 6.5∶ 1 which is nearly proportional to the edge ratio (50∶5∶1) for small, middle, and large sizes of CNTs' arrays. Besides, ultra low turn-on field (∼1.4 V/µm), well emission image uniformity and stability of about ±6.52 % at 650V were also achieved.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of carbon nanotube pillar arrays' edge effect on field emission characteristics\",\"authors\":\"C. Juan, Jun-Han Lin\",\"doi\":\"10.1109/ISNE.2010.5669164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effect of carbon nanotube pillar arrays' edge effect on field emission characteristics is first studied. The ratio of field emission current density at 5.733V/µm is about 55∶ 6.5∶ 1 which is nearly proportional to the edge ratio (50∶5∶1) for small, middle, and large sizes of CNTs' arrays. Besides, ultra low turn-on field (∼1.4 V/µm), well emission image uniformity and stability of about ±6.52 % at 650V were also achieved.\",\"PeriodicalId\":412093,\"journal\":{\"name\":\"2010 International Symposium on Next Generation Electronics\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Symposium on Next Generation Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2010.5669164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Symposium on Next Generation Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2010.5669164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of carbon nanotube pillar arrays' edge effect on field emission characteristics
Effect of carbon nanotube pillar arrays' edge effect on field emission characteristics is first studied. The ratio of field emission current density at 5.733V/µm is about 55∶ 6.5∶ 1 which is nearly proportional to the edge ratio (50∶5∶1) for small, middle, and large sizes of CNTs' arrays. Besides, ultra low turn-on field (∼1.4 V/µm), well emission image uniformity and stability of about ±6.52 % at 650V were also achieved.
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