用k·p法计算Si1−xGex-Si量子阱异质结构的能量特性

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624178

Dmitrii Ushakov, V. Kononenko

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引用次数: 0

摘要

采用四波段k·p方法对Si1−xGex-Si量子阱结构的能量特性进行了数值计算。结果表明，改变有源层的厚度和势垒的高度和宽度可以控制光跃迁的频率ω。建立了ħω的解析表达式，该表达式与k·p法的数值计算结果吻合较好，准确地定义了ħω的变化极限。

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Calculation of energy characteristics of Si1−xGex-Si quantum-well heterostructures using k·p method

Numerical calculations of energy characteristics of quantum-well structures based on Si1−xGex-Si have been performed using the four-band k·p method. It is shown that varying the thickness of the active layer and the height and width of potential barriers one can control the frequency ω of optical transitions. The analytical expressions for ħω are established, which are in good agreement with the numerical calculations by the k·p method, exactly define the limits of changes in ħω.

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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