{"title":"提高近阈值多核处理器成品率的细粒度电压增强","authors":"J. Kong, Arslan Munir, F. Koushanfar","doi":"10.1145/2742060.2742105","DOIUrl":null,"url":null,"abstract":"Process variation is a major impediment in optimizing yield, energy, and performance in near-threshold many-core processors. In this paper, we present a comprehensive analysis on yield losses in near-threshold many-core processors. Based on our analysis, we propose energy-efficient yield improvement techniques for near-threshold many-core processors: SRAM cell arrays and Wordline driver voltage Boosting (SWBoost) and Cache voltage Boosting (CBoost). Results reveal that SWBoost and CBoost improve a chip yield by up to 66% and 83%, respectively. Furthermore, runtime energy overheads of SWBoost and CBoost are only 0.46% and 0.54%, respectively, which are much lower than conventional voltage boosting techniques.","PeriodicalId":255133,"journal":{"name":"Proceedings of the 25th edition on Great Lakes Symposium on VLSI","volume":"325 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fine-Grained Voltage Boosting for Improving Yield in Near-Threshold Many-Core Processors\",\"authors\":\"J. Kong, Arslan Munir, F. Koushanfar\",\"doi\":\"10.1145/2742060.2742105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Process variation is a major impediment in optimizing yield, energy, and performance in near-threshold many-core processors. In this paper, we present a comprehensive analysis on yield losses in near-threshold many-core processors. Based on our analysis, we propose energy-efficient yield improvement techniques for near-threshold many-core processors: SRAM cell arrays and Wordline driver voltage Boosting (SWBoost) and Cache voltage Boosting (CBoost). Results reveal that SWBoost and CBoost improve a chip yield by up to 66% and 83%, respectively. Furthermore, runtime energy overheads of SWBoost and CBoost are only 0.46% and 0.54%, respectively, which are much lower than conventional voltage boosting techniques.\",\"PeriodicalId\":255133,\"journal\":{\"name\":\"Proceedings of the 25th edition on Great Lakes Symposium on VLSI\",\"volume\":\"325 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 25th edition on Great Lakes Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2742060.2742105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 25th edition on Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2742060.2742105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fine-Grained Voltage Boosting for Improving Yield in Near-Threshold Many-Core Processors
Process variation is a major impediment in optimizing yield, energy, and performance in near-threshold many-core processors. In this paper, we present a comprehensive analysis on yield losses in near-threshold many-core processors. Based on our analysis, we propose energy-efficient yield improvement techniques for near-threshold many-core processors: SRAM cell arrays and Wordline driver voltage Boosting (SWBoost) and Cache voltage Boosting (CBoost). Results reveal that SWBoost and CBoost improve a chip yield by up to 66% and 83%, respectively. Furthermore, runtime energy overheads of SWBoost and CBoost are only 0.46% and 0.54%, respectively, which are much lower than conventional voltage boosting techniques.
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