Kaizhe Guo, W. Steyaert, Alexander Standaert, D. Simic, P. Reynaert
{"title":"CMOS太赫兹电路:梦想还是噩梦?","authors":"Kaizhe Guo, W. Steyaert, Alexander Standaert, D. Simic, P. Reynaert","doi":"10.1109/IWMTS.2018.8454686","DOIUrl":null,"url":null,"abstract":"CMOS transistors have become nanometer devices and operating frequencies $(f_{max})$ of transistors keep increasing with each technology node. Today, in 28 nm and 40 nm CMOS, sub-THz circuits can be implemented in standard CMOS. By using non-linear circuit techniques, CMOS can be used beyond $f_{max}$. In this paper, several design examples will be discussed together with some application results.","PeriodicalId":267901,"journal":{"name":"2018 First International Workshop on Mobile Terahertz Systems (IWMTS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"THz Circuits in CMOS: Dream or Nightmare?\",\"authors\":\"Kaizhe Guo, W. Steyaert, Alexander Standaert, D. Simic, P. Reynaert\",\"doi\":\"10.1109/IWMTS.2018.8454686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CMOS transistors have become nanometer devices and operating frequencies $(f_{max})$ of transistors keep increasing with each technology node. Today, in 28 nm and 40 nm CMOS, sub-THz circuits can be implemented in standard CMOS. By using non-linear circuit techniques, CMOS can be used beyond $f_{max}$. In this paper, several design examples will be discussed together with some application results.\",\"PeriodicalId\":267901,\"journal\":{\"name\":\"2018 First International Workshop on Mobile Terahertz Systems (IWMTS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 First International Workshop on Mobile Terahertz Systems (IWMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWMTS.2018.8454686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 First International Workshop on Mobile Terahertz Systems (IWMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWMTS.2018.8454686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS transistors have become nanometer devices and operating frequencies $(f_{max})$ of transistors keep increasing with each technology node. Today, in 28 nm and 40 nm CMOS, sub-THz circuits can be implemented in standard CMOS. By using non-linear circuit techniques, CMOS can be used beyond $f_{max}$. In this paper, several design examples will be discussed together with some application results.