使用多能质子寿命控制技术的扩展SOA的4.5 kv快速二极管

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764078

O. Humbel, N. Galster, F. Bauer, W. Fichtner

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引用次数: 13

摘要

本文介绍了一种利用离子辐照技术制备的4.5 kV二极管，在第二步辐照中，电子被质子取代。第二个质子峰位于n碱基的中间附近。与离子-电子复合辐照相比，双质子峰二极管的最大反向恢复电流更小，尾电流行为更平滑。新装置具有优异的坚固性，能够承受1 MW/cm/sup /的峰值功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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4.5 kV-fast-diodes with expanded SOA using a multi-energy proton lifetime control technique

This paper presents a 4.5 kV diode fabricated using a new ion irradiation technique whereby electrons are replaced by protons in a second irradiation step. The second proton peak is located close to the middle of the n-base. Compared to the combined ion-electron irradiation, diodes with a double proton peak show a smaller maximum reverse-recovery current and a much smoother tail current behavior. The new device has an excellent ruggedness, and is able to withstand a peak power of 1 MW/cm/sup 2/.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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