系统级封装器件,最高可达200°C

Yunlong Fan, Pu Zhang, Jingjing Cheng
{"title":"系统级封装器件,最高可达200°C","authors":"Yunlong Fan, Pu Zhang, Jingjing Cheng","doi":"10.1109/ICSJ.2017.8240136","DOIUrl":null,"url":null,"abstract":"This paper designs a System-in-Package (SiP) device with DSP + FPGA + ADC as the basic architecture. The diffusion thermal resistance model of SiP devices is established, which reduces the thermal resistance of the device by using special encapsulation materials and high heat transfer efficiency. At the same time, the temperature grade of SiP devices is improved. The laboratory temperature test shows that the Q factor of the critical output path is not less than 15 and the normalized gain of the acquisition signal is less than 0.4 dB in the band range. The SiP device can be applied to the high temperature environment at 200°C, and solves the problem of digital pulse sequence generation and low signal to noise ratio (SNR) signal acquisition in low field nuclear magnetic resonance (NMR) logging equipment.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A system-in-package device which can reach 200 °C at most\",\"authors\":\"Yunlong Fan, Pu Zhang, Jingjing Cheng\",\"doi\":\"10.1109/ICSJ.2017.8240136\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper designs a System-in-Package (SiP) device with DSP + FPGA + ADC as the basic architecture. The diffusion thermal resistance model of SiP devices is established, which reduces the thermal resistance of the device by using special encapsulation materials and high heat transfer efficiency. At the same time, the temperature grade of SiP devices is improved. The laboratory temperature test shows that the Q factor of the critical output path is not less than 15 and the normalized gain of the acquisition signal is less than 0.4 dB in the band range. The SiP device can be applied to the high temperature environment at 200°C, and solves the problem of digital pulse sequence generation and low signal to noise ratio (SNR) signal acquisition in low field nuclear magnetic resonance (NMR) logging equipment.\",\"PeriodicalId\":225668,\"journal\":{\"name\":\"2017 IEEE CPMT Symposium Japan (ICSJ)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE CPMT Symposium Japan (ICSJ)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSJ.2017.8240136\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE CPMT Symposium Japan (ICSJ)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2017.8240136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文设计了一种以DSP + FPGA + ADC为基本架构的系统级封装(SiP)器件。建立了SiP器件的扩散热阻模型,采用特殊的封装材料和高的传热效率降低了器件的热阻。同时提高了SiP器件的温度等级。实验室温度测试表明,关键输出路径的Q因子不小于15,采集信号的归一化增益在该波段范围内小于0.4 dB。SiP装置可应用于200℃高温环境,解决了低场核磁共振测井设备的数字脉冲序列生成和低信噪比信号采集问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A system-in-package device which can reach 200 °C at most
This paper designs a System-in-Package (SiP) device with DSP + FPGA + ADC as the basic architecture. The diffusion thermal resistance model of SiP devices is established, which reduces the thermal resistance of the device by using special encapsulation materials and high heat transfer efficiency. At the same time, the temperature grade of SiP devices is improved. The laboratory temperature test shows that the Q factor of the critical output path is not less than 15 and the normalized gain of the acquisition signal is less than 0.4 dB in the band range. The SiP device can be applied to the high temperature environment at 200°C, and solves the problem of digital pulse sequence generation and low signal to noise ratio (SNR) signal acquisition in low field nuclear magnetic resonance (NMR) logging equipment.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信