Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Displacement-damage induced degradation in InAlN/GaN structures is studied for different proton fluences, from 110¹⁴ p/cm² to 410¹⁴ p/cm², at 3MeV. DC analysis reveals that devices experience a V_TH positive shift and an increase of the R_ON, following a linear trend with the proton radiation fluence, as a consequence of the creation of acceptor-like traps. Furthermore an increase of the diode gate current is noticed. Pulsed measurements indicate an increase of the so called “current collapse”, especially when a high gate drain voltage difference is applied, as a consequence of the performances variation in the dynamic max g_m, V_TH shift and R_ON.