以物理为导向的模型来量化动态噪声裕度[片内噪声]

T. Gemmeke, T. Noll
{"title":"以物理为导向的模型来量化动态噪声裕度[片内噪声]","authors":"T. Gemmeke, T. Noll","doi":"10.1109/ESSCIR.2004.1356719","DOIUrl":null,"url":null,"abstract":"The increase in on-chip noise has led to severe signal integrity problems in modern chip design. In a new approach, an analytical, physically motivated model is proposed which quantities the pulse transfer characteristic of a gate, aimed at quick circuit analysis. The accuracy of the model is validated in comparison with simulation results from a circuit simulator. Moreover, its application in a standard design flow is demonstrated. As the model is based on physical circuit parameters, it is also well suited for what-if analysis.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A physically oriented model to quantify the dynamic noise margin [on-chip noise]\",\"authors\":\"T. Gemmeke, T. Noll\",\"doi\":\"10.1109/ESSCIR.2004.1356719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The increase in on-chip noise has led to severe signal integrity problems in modern chip design. In a new approach, an analytical, physically motivated model is proposed which quantities the pulse transfer characteristic of a gate, aimed at quick circuit analysis. The accuracy of the model is validated in comparison with simulation results from a circuit simulator. Moreover, its application in a standard design flow is demonstrated. As the model is based on physical circuit parameters, it is also well suited for what-if analysis.\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

片内噪声的增加导致了现代芯片设计中严重的信号完整性问题。在一种新的方法中,提出了一种分析的、物理驱动的模型,用于测量门的脉冲传递特性,旨在快速分析电路。通过与电路模拟器仿真结果的对比,验证了该模型的准确性。此外,还演示了其在标准设计流程中的应用。由于该模型基于物理电路参数,因此它也非常适合于假设分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A physically oriented model to quantify the dynamic noise margin [on-chip noise]
The increase in on-chip noise has led to severe signal integrity problems in modern chip design. In a new approach, an analytical, physically motivated model is proposed which quantities the pulse transfer characteristic of a gate, aimed at quick circuit analysis. The accuracy of the model is validated in comparison with simulation results from a circuit simulator. Moreover, its application in a standard design flow is demonstrated. As the model is based on physical circuit parameters, it is also well suited for what-if analysis.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信