非易失性相变存储器及其制造技术

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292931

A. Balashov, N. Balan, A. Kalinin

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引用次数: 0

摘要

本文介绍了存储阵列中不含存取晶体管的非易失性相变存储结构。提出了在标准CMOS晶圆(如65nm)上制造器件的方法。该方法假定应用了带有纳米压印工具的定制集群设备。该集群用于在CMOS晶圆上形成附加层以创建存储阵列。采用紫外纳米压印代替光学光刻。

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Non-Volatile Phase Change Memory and Its Fabrication Technology

This paper describes the non-volatile phase change memory structure without access transistor in the memory array. The method of the device fabricating on the standard CMOS wafer (e.g., 65 nm) is proposed. The method assumes the application of the custom cluster equipment with a nanoimprint tool. This cluster is used to form additional layers on the CMOS wafer to create the storage array. UV nanoimprint is used instead of the optical lithography.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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