{"title":"用于140 GHz的脉冲和连续n型硅单漂移冲击二极管","authors":"J. Wenger, J. Freyer, W. Harth","doi":"10.1109/EUMA.1986.334254","DOIUrl":null,"url":null,"abstract":"The drift-zone length and optimum doping density of 140 GHz Impatt diodes is evaluated from measurements of the breakdown voltage versus doping concentration. Pulsed and cw n-type single drift diodes were fabricated and the rf-performance was investigated. Relatively high output power levels of 1.6 W (pulsed) and 70 mW (cw) with efficiency values of 2.6 % and 3.2%, respectively, indicate a proper design. Improved repro ducibility can be achieved using a technology with beam-lead diodes and quartz ring packages.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pulsed and CW N-Type Silicon Single-Drift Impatt Diodes for 140 GHz\",\"authors\":\"J. Wenger, J. Freyer, W. Harth\",\"doi\":\"10.1109/EUMA.1986.334254\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The drift-zone length and optimum doping density of 140 GHz Impatt diodes is evaluated from measurements of the breakdown voltage versus doping concentration. Pulsed and cw n-type single drift diodes were fabricated and the rf-performance was investigated. Relatively high output power levels of 1.6 W (pulsed) and 70 mW (cw) with efficiency values of 2.6 % and 3.2%, respectively, indicate a proper design. Improved repro ducibility can be achieved using a technology with beam-lead diodes and quartz ring packages.\",\"PeriodicalId\":227595,\"journal\":{\"name\":\"1986 16th European Microwave Conference\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 16th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1986.334254\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pulsed and CW N-Type Silicon Single-Drift Impatt Diodes for 140 GHz
The drift-zone length and optimum doping density of 140 GHz Impatt diodes is evaluated from measurements of the breakdown voltage versus doping concentration. Pulsed and cw n-type single drift diodes were fabricated and the rf-performance was investigated. Relatively high output power levels of 1.6 W (pulsed) and 70 mW (cw) with efficiency values of 2.6 % and 3.2%, respectively, indicate a proper design. Improved repro ducibility can be achieved using a technology with beam-lead diodes and quartz ring packages.
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