in /sub 0.53/Ga/sub 0.47/As/ in /sub 0.52/Al/sub 0.48/As多量子阱结构中重空穴子带的量子受限Stark效应

K. Tanaka, T. Kurata, N. Kotera
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引用次数: 0

摘要

在室温外电场下,测量了in /sub 0.53/Ga/sub 0.47/As/ in /sub 0.52/Al/sub 0.48/As多量子阱的红外光电流谱。带间光电流谱显示出许多清晰的阶梯状结构,这是由于被自由激子态强化的二维亚带,在10-nm厚的InGaAs量子阱(QWs)中被10-nm厚的势垒隔开。从高场推断出近零场量子阱中受限态的能量与重空穴子带和传导子带的量子数的平方成正比。在倾斜偏振光下,通过单独实验判别了光孔的贡献。HH相关峰对偏置场最敏感,因为在HH子带中量子受限斯塔克效应(QCSE)更强。模型计算精确地揭示了允许的LH跃迁可以在电场作用下转变为禁止的HH跃迁。推测HH质量法向QW平面的非抛物性较小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantum confined Stark effects of heavy hole subbands in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum well structures using photocurrent spectroscopy
Infrared photocurrent spectra in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiquantum wells were measured at room temperature under an external electric field. The interband photocurrent spectra showed a number of clear steplike structures due to two-dimensional subbands accentuated by free exciton states, in 10-nm-thick InGaAs quantum wells (QWs) separated by 10-nm-thick barriers. Energies of the confined states in QWs near zero field were extrapolated from higher field and shown to be proportional to the squared quantum numbers of heavy hole (HH) subbands and conduction subbands. Contribution of light hole (LH) was discriminate by a separate experiment under a tilted polarized light. The HH-related peaks were most sensitive to the bias field because the quantum confined Stark effect (QCSE) was stronger in HH subbands. Model calculation precisely revealed that an allowed LH transition could change into a forbidden HH transition by an electric field. Nonparabolicity of HH mass normal to the QW plane was surmised small.
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