T. Meister, Herbert Knapp, H. Schafer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, W. Perndl, M. Wurzer, T. Bottner, J. Bock
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High-speed SiGe HBT technology and applications to mm-wave circuits
A SiGe bipolar technology for high frequency applications is presented. A transit frequency of 206 GHz, a maximum oscillation frequency of 200 GHz and a ring oscillator gate delay time of 3.9 ps have been obtained. With a 110 GHz dynamic frequency divider, a 86 GHz static frequency divider, a 52 GHz dual modulus 256/257 prescaler and a 98 GHz VCO state of the art high frequency circuits could be realized in this SiGe technology.
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