{"title":"热冲击引起的塑料封装半导体器件AL金属化变形","authors":"Masaaki Isagawa, Yuzi Iwasaki, T. Sutoh","doi":"10.1109/IRPS.1980.362935","DOIUrl":null,"url":null,"abstract":"Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":"{\"title\":\"Deformation of AL Metallization in Plastic Encapsulated Semiconductor Devices Caused by Thermal Shock\",\"authors\":\"Masaaki Isagawa, Yuzi Iwasaki, T. Sutoh\",\"doi\":\"10.1109/IRPS.1980.362935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"38\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362935\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Deformation of AL Metallization in Plastic Encapsulated Semiconductor Devices Caused by Thermal Shock
Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.
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