在n通道，高压混合SINFET的锁存

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991069

T. Chow, D. Pattanayak, B. J. Baliga, M. Adler

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引用次数: 3

摘要

测量了500V n通道HSINFET的锁存特性，并与具有和不具有集电极短路的横向IGBT进行了比较。重点研究了衬底电阻率、集电极肖特基区长度和发射极短路对锁存抑制的影响。此外，锁存或最大栅极控制电流在高温高达150℃的测量。而HSINFET的锁存优于相应的集电极短路的light 's，但不如没有集电极短路的light 's。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Latching in N-channel, high-voltage hybrid SINFET's

The latching characteristics of 500V, n-channel HSINFET's are measured and compared to lateral IGBT's with and without collector shorts. In particular, the effect of substrate resistivity, Schottky region length in the collector and emitter shorts on latching suppression are studied. Also, latching or maximum gate controlled current at elevated temperatures up to 150 C is measured. While the HSINFET's are superior to the corresponding collector-shorted LIGBT's in latching, but inferior to the LIGBT's without collector shorts.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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