{"title":"cmos门内的“电阻短路”","authors":"Hong Hao, E. McCluskey","doi":"10.1109/TEST.1991.519521","DOIUrl":null,"url":null,"abstract":"This paper studies the effects of shorts within CMOS gates. Dynamic as well as static gate properties are analyzed as a function of the short’s resistance. Increased propagation delay is found to be a common dynamic effect. Circuit behavior can change drastically with small variations in a short’s resistance. It is found that faults caused by transistor gate-to-source and gate-to-drain shorts can be dependent not only on inputs of gates containing the faults but also on other signals. This pattern dependence due to “resistive shorts” can invalidate tests generated using normal TPG procedures.","PeriodicalId":272630,"journal":{"name":"1991, Proceedings. International Test Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"145","resultStr":"{\"title\":\"\\\"RESISTIVE SHORTS\\\" WITHIN CMOS GATES\",\"authors\":\"Hong Hao, E. McCluskey\",\"doi\":\"10.1109/TEST.1991.519521\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper studies the effects of shorts within CMOS gates. Dynamic as well as static gate properties are analyzed as a function of the short’s resistance. Increased propagation delay is found to be a common dynamic effect. Circuit behavior can change drastically with small variations in a short’s resistance. It is found that faults caused by transistor gate-to-source and gate-to-drain shorts can be dependent not only on inputs of gates containing the faults but also on other signals. This pattern dependence due to “resistive shorts” can invalidate tests generated using normal TPG procedures.\",\"PeriodicalId\":272630,\"journal\":{\"name\":\"1991, Proceedings. International Test Conference\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"145\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1991, Proceedings. International Test Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TEST.1991.519521\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1991, Proceedings. International Test Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.1991.519521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper studies the effects of shorts within CMOS gates. Dynamic as well as static gate properties are analyzed as a function of the short’s resistance. Increased propagation delay is found to be a common dynamic effect. Circuit behavior can change drastically with small variations in a short’s resistance. It is found that faults caused by transistor gate-to-source and gate-to-drain shorts can be dependent not only on inputs of gates containing the faults but also on other signals. This pattern dependence due to “resistive shorts” can invalidate tests generated using normal TPG procedures.
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