提高灵敏度的压阻式压力传感器的设计

Siddarud Bannikoppa, Ajayakumar Katageri, Kirankumar B. Balavalad, B. G. Sheeparamatti
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引用次数: 9

摘要

压阻式压力传感器是一种重要的测量压力的传导机制,因为它更容易与电子元件集成,其响应更线性,与其他传导机制相比,它们固有地屏蔽了射频噪声,并且制造容易。本文采用压阻式转导机构设计压力传感器。该传感器的膜片采用n型硅和p型硅压阻设计,在膜片的最敏感区域采用惠斯通电桥结构,膜片表面放置p型硅压阻。对所提出的设计方案进行了分析,研究了膜片的挠度和过桥输出电压。研究了压敏电阻长度变化对输出电压的影响。结果表明,该传感器在压敏电阻长度为50um时具有最高的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of Piezoresistive pressure sensor for enhanced sensitivity
Piezoresistive pressure sensor is a significant transduction mechanism for measuring pressure due to the fact that it is simpler to integrate with electronics, its response is more linear, they are inherently shielded from RF noise and fabrication is easy compared to other transduction mechanism. In this paper, piezoresistive transduction mechanism is employed for design of a pressure sensor. The diaphragm of the proposed sensor is designed using n-type Silicon with p-type Silicon piezoresistors placed on the surface of a diaphragm in a Wheatstone bridge configuration at the most sensitive region of the diaphragm. The proposed design is analyzed to study the deflection of the diaphragm and the output voltage across the bridge. The effect of change in piezoresistor length on the output voltage is also investigated. The results reveal that the proposed sensor provides highest sensitivity for the piezoresistor length of 50um.
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