利用优化掺杂步骤实现高效率4H-SiC IMPATT二极管

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628115

G. Dash, J. Pradhan, S. K. Swain, S. R. Pattanaik

{"title":"利用优化掺杂步骤实现高效率4H-SiC IMPATT二极管","authors":"G. Dash, J. Pradhan, S. K. Swain, S. R. Pattanaik","doi":"10.1109/EDSSC.2013.6628115","DOIUrl":null,"url":null,"abstract":"The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps\",\"authors\":\"G. Dash, J. Pradhan, S. K. Swain, S. R. Pattanaik\",\"doi\":\"10.1109/EDSSC.2013.6628115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

电场和雪崩区的宽度是决定IMPATT二极管性能的关键因素。为了优化这一特性，在雪崩区引入了一种新的掺杂模式，并探讨了其对4H-SiC IMPATT二极管太赫兹特性的影响。令人兴奋的是，通过提出的掺杂步骤，IMPAT T二极管的转换效率达到了17.24%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps

The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

自引率

0.00%

发文量