FET开关的建模

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340092

F. Kharabi

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引用次数: 4

摘要

本文介绍了用于开关应用的FET器件建模的显著特征，并以GaAs PHEMT和GaN HEMT技术为例。它解释了区分这些模型与PA模型的细微差异，以及准确描述它们的小信号和大信号行为所需的条件。在这方面，对如何接近关键参数的制定提出了建议，以满足具有新型器件结构的大功率开关建模的独特要求。

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Modeling of FET Switches

This paper describes the salient features of modeling FET devices for switch applications, with examples in GaAs PHEMT and GaN HEMT technologies. It explains the subtle differences that differentiate these models from PA models and what is required to accurately describe their small- and large- signal behavior. In that respect, suggestions are made on how to approach formulation of critical parameters in meeting unique requirements of modeling high-power switches with novel device structures.

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2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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