随机工艺变化对不同65nm SRAM电池拓扑结构的影响

2010 3rd International Conference on Emerging Trends in Engineering and Technology Pub Date : 2010-11-19 DOI:10.1109/ICETET.2010.19

Sumit Kansal, M. Lanuzza, P. Corsonello

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引用次数: 1

摘要

本文分析了随机工艺变化对不同低漏SRAM拓扑结构的影响。该分析是通过广泛的蒙特卡罗模拟和利用商用65纳米技术进行的。仿真结果表明，低Vdd SRAM单元在性能和抗随机过程变化的鲁棒性之间取得了最好的平衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Random Process Variations on Different 65nm SRAM Cell Topologies

In this paper, the influence of random process variations on different low leakage SRAM topologies has been analyzed. This analysis was performed through extensive Monte Carlo simulations and exploiting a commercial 65 nm technology. Simulation results demonstrate that the Low Vdd SRAM cell presents the best trade-off between performances and robustness against random process variations.

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2010 3rd International Conference on Emerging Trends in Engineering and Technology

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