集成电路精密全光电磁兼容测试技术

Bo Yang, Wenhao He, Bang-Xing Gu, M. Dong, Guobin Chen, Li-Wen Xing, G. Du
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引用次数: 0

摘要

芯片级电磁兼容测试和诊断分析技术在高集成度微波和毫米波芯片的设计和开发中起着重要作用。本文构建了一种基于金刚石NV色心的全光无创微波磁场扫描探头系统,其RF b场灵敏度为5 nT/√Hz,空间分辨率小于10微米。利用塞曼分裂技术可以实现直流到100ghz的频率调谐。利用它的四个晶体轴,可以实现微波近场的全矢量重构。利用量子磁场逆辐射问题求解器可以推导出被测微芯片表面的电流分布。通过芯片表面的电流分布,可以进一步分析芯片表面的电磁兼容问题。本文建立的实验系统通过对3dB截止频率为6GHz的GaAs MMIC低通滤波芯片进行微波近场成像验证了该系统的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Precision All-Optical EMC Test Technique of Integrated Circuits
Chip-level EMC testing and diagnostic analysis technology plays an important role in the design and development of highly integrated microwave and millimeter-wave chips. In this paper, an all-optical and non-invasive microwave magnetic field scanning probe system based on diamond NV color centers is constructed, with RF B-field sensitivity of 5 nT/√Hz and spatial resolution smaller than 10 micron. The frequency tuning from DC to 100 GHz magnetic resonance can be achieved by Zeeman splitting technique. Full vector reconstruction of microwave near field can be realized with its four crystal axis. The current distribution on the surface of the microchip under test can be deduced by the quantum magnetic field inverse radiation problem solver. The EMC problem on the chip surface can be further analyzed by the current distribution on the chip surface. The experimental system built in this paper verifies the feasibility of the system by microwave near-field imaging of a GaAs MMIC low-pass filter chip with 3dB cut-off frequency of 6GHz.
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