B. Holloway, M. Zhu, Xin Zhao, Jianjun Wang, R. Outlaw
{"title":"基于独立的二维碳纳米结构的毫安级场发射器件","authors":"B. Holloway, M. Zhu, Xin Zhao, Jianjun Wang, R. Outlaw","doi":"10.1109/IVNC.2005.1619466","DOIUrl":null,"url":null,"abstract":"Recent results using carbon nanosheets (CNS) as the field emission source in a backgated device for high current applications are presented. The device inherently eliminates arcing between the gate and the cathode and also creates a much more open cathode configuration for better vacuum conductance and getter pumping. The device allows for emission site burn out and turn-on of secondary sites. Modelling results also suggest that devices with line widths <3 /spl mu/m and properly placed nanostructures should be capable of >10 mA/mm/sup 2/. Devices with 3 /spl mu/m wide lines have been fabricated and are currently being tested. The maximum current and modulation results from these devices will also be presented.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Milliamp-class field emission devices based on free-standing, two-dimensional carbon nanostructures\",\"authors\":\"B. Holloway, M. Zhu, Xin Zhao, Jianjun Wang, R. Outlaw\",\"doi\":\"10.1109/IVNC.2005.1619466\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent results using carbon nanosheets (CNS) as the field emission source in a backgated device for high current applications are presented. The device inherently eliminates arcing between the gate and the cathode and also creates a much more open cathode configuration for better vacuum conductance and getter pumping. The device allows for emission site burn out and turn-on of secondary sites. Modelling results also suggest that devices with line widths <3 /spl mu/m and properly placed nanostructures should be capable of >10 mA/mm/sup 2/. Devices with 3 /spl mu/m wide lines have been fabricated and are currently being tested. The maximum current and modulation results from these devices will also be presented.\",\"PeriodicalId\":121164,\"journal\":{\"name\":\"2005 International Vacuum Nanoelectronics Conference\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 International Vacuum Nanoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2005.1619466\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Vacuum Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2005.1619466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Milliamp-class field emission devices based on free-standing, two-dimensional carbon nanostructures
Recent results using carbon nanosheets (CNS) as the field emission source in a backgated device for high current applications are presented. The device inherently eliminates arcing between the gate and the cathode and also creates a much more open cathode configuration for better vacuum conductance and getter pumping. The device allows for emission site burn out and turn-on of secondary sites. Modelling results also suggest that devices with line widths <3 /spl mu/m and properly placed nanostructures should be capable of >10 mA/mm/sup 2/. Devices with 3 /spl mu/m wide lines have been fabricated and are currently being tested. The maximum current and modulation results from these devices will also be presented.
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