{"title":"载流子掺杂对MNiSn基半heusler合金导热性能的影响","authors":"H. Muta, T. Kanemitsu, K. Kurosaki, S. Yamanaka","doi":"10.1109/ICT.2006.331295","DOIUrl":null,"url":null,"abstract":"Thermal conductivity of doped MNiSn (M = Ti, Zr) half-Heusler alloys has been investigated from room temperature to 1000 K. Nonnegligible increase of thermal conductivity was observed for all the samples at high temperature. The temperature dependence appeared to the corresponding to the change of electrical properties and carrier concentration, indicating that the electron-hole pair generation caused the increase of thermal conductivity. The effect, called ambipolar diffusion effect, depends on a bandgap and a ratio of electron and hole conduction. In this study the bandgap was determined from electrical conductivity of yttrium doped of ZrNiSn and the temperature dependence of the ambipolar diffusion effect was quantitatively investigated","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effect of carrier doping on the thermal conductivity of MNiSn based half-Heusler alloy\",\"authors\":\"H. Muta, T. Kanemitsu, K. Kurosaki, S. Yamanaka\",\"doi\":\"10.1109/ICT.2006.331295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal conductivity of doped MNiSn (M = Ti, Zr) half-Heusler alloys has been investigated from room temperature to 1000 K. Nonnegligible increase of thermal conductivity was observed for all the samples at high temperature. The temperature dependence appeared to the corresponding to the change of electrical properties and carrier concentration, indicating that the electron-hole pair generation caused the increase of thermal conductivity. The effect, called ambipolar diffusion effect, depends on a bandgap and a ratio of electron and hole conduction. In this study the bandgap was determined from electrical conductivity of yttrium doped of ZrNiSn and the temperature dependence of the ambipolar diffusion effect was quantitatively investigated\",\"PeriodicalId\":346555,\"journal\":{\"name\":\"2006 25th International Conference on Thermoelectrics\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 25th International Conference on Thermoelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2006.331295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 25th International Conference on Thermoelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2006.331295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of carrier doping on the thermal conductivity of MNiSn based half-Heusler alloy
Thermal conductivity of doped MNiSn (M = Ti, Zr) half-Heusler alloys has been investigated from room temperature to 1000 K. Nonnegligible increase of thermal conductivity was observed for all the samples at high temperature. The temperature dependence appeared to the corresponding to the change of electrical properties and carrier concentration, indicating that the electron-hole pair generation caused the increase of thermal conductivity. The effect, called ambipolar diffusion effect, depends on a bandgap and a ratio of electron and hole conduction. In this study the bandgap was determined from electrical conductivity of yttrium doped of ZrNiSn and the temperature dependence of the ambipolar diffusion effect was quantitatively investigated
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