D. Nicolas, A. Serhan, A. Giry, T. Parra, E. Mercier
{"title":"用于LTE功率放大器匹配网络调谐的全集成SOI CMOS复杂阻抗检测器","authors":"D. Nicolas, A. Serhan, A. Giry, T. Parra, E. Mercier","doi":"10.1109/RFIC.2017.7969005","DOIUrl":null,"url":null,"abstract":"This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 2∶1 to 6∶1.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier\",\"authors\":\"D. Nicolas, A. Serhan, A. Giry, T. Parra, E. Mercier\",\"doi\":\"10.1109/RFIC.2017.7969005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 2∶1 to 6∶1.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier
This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 2∶1 to 6∶1.