栅极诱导与植入体掺杂对Z2-FET直流工作的影响

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8308748

C. Navarro, F. Gámiz, N. Rodriguez, L. Donetti, C. Sampedro, Seong-Il Kim, Y. Kim, S. Cristoloveanu

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引用次数: 0

摘要

在几种栅极偏置情况下，分析了栅极诱导虚掺杂和植入体掺杂对直流Z2-FET工作的影响。结果与相关结构如肖克利和P-I-N二极管或电流门晶闸管进行了比较。栅极偏置对于观察Z2-FET器件的锐开关特性是必不可少的。

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Gate-induced vs. implanted body doping impact on Z2-FET DC operation

The impact of the gate-induced virtual and body implanted doping on the DC Z2-FET operation is analyzed under several gate-biasing scenarios. Results are compared with related architectures such as the Shockley and P-I-N diodes or the current-gate thyristor. Gate biasing turns out to be essential to observe the characteristic sharp switch of Z2-FET device.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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